Economic impact of the ministry of defence’s budget: methodological design and results for the Spanish economy

This article analyses the economic impact of the expenditure budget of the Spanish Ministry of Defence (MoD) and its Autonomous Agencies (AA), distinguishing direct, indirect and induced effects. The input–output methodology is used to find intersectoral effects on the rest of the economy. The article quantifies the economic impact in terms of production, gross value added (GVA), employed population, tax revenue, and also in terms of its contribution to the gross domestic product (GDP) of Spain in 2010. The results show that the activity of the MoD and AA generates 1.2% of the country’s GDP and 1.7% of total employment in that year.     

导弹系统安全性分析中的引发事件鉴别方法

引发事件鉴别是基于事故机理安全性分析的首要任务。鉴别结果是否全面、完整直接影响最终分析结果的有效性。导弹系统安全风险涉及面广、影响因素多,需要系统的可操作方法来指导引发事件的鉴别工作。针对导弹工作特点,提出考虑导弹任务剖面,运用主逻辑图对导弹进行系统性的层次化描述,对引发事件进行整理和归纳。将危险与可操作性分析引入导弹系统安全性分析中进行引发事件鉴别,结合故障模式影响分析,支持对单一故障类和参数异常类引发事件的鉴别。结果表明,所提框架为解决导弹系统安全性分析中引发事件鉴别的系统性完整性提供了可行的思路。     

抗电磁干扰高分子材料的研究与应用

通过对电磁波干扰的现象分析,阐述了屏蔽作用原理及屏蔽方法,研究了表面导电材料和导电复合材料等抗电磁干扰高分子材料的性能、工艺及其屏蔽效果,并对它们的应用与发展前景进行了讨论。     

高能离子在材料中输运的蒙特卡罗模拟

利用蒙特卡罗方法对高能离子在材料中的输运进行了计算机模拟研究 ,入射高能离子与靶材料的作用近似为核散射和电子作用两个独立的部分 ,核散射能量损失采用经典两体碰撞近似 ,通过对碰撞参数的随机抽样得到散射角 ,电子能量损失高能时采用Bethe-Bloch公式 ,低能时采用Lindhard -Scharff公式 ,中能时采用插值公式。最后对高能铁离子入射于铝、硅材料的输运进行了模拟计算 ,给出了模拟结果并进行了分析。     

影响电流变效应的因素

根据国内外研究的现状 ,分析综述了影响电流变效应 (ER效应 )的因素     

Efficient budget allocation strategies for elementary effects method in stochastic simulation

This paper focuses on extending the Morris' elementary effects method (MM) for sensitivity analysis/factor screening originated in the context of deterministic computer experiments to the stochastic simulation setting. Given a fixed simulation budget to expend, the main objective is to provide efficient and accurate estimates of main and interaction (or nonlinear) effects coined by the standard MM for characterizing the importance of each factor, despite the impact of simulation errors. Taking into account both the factor/input sampling uncertainty rooted in MM and the random errors inherent in a stochastic simulation, we develop efficient budget allocation strategies for implementing MM in this new context. Under each strategy proposed, we derive its corresponding optimal budget partition and optimal budget allocation rules. Numerical results corroborate the practical effectiveness of the proposed budget allocation strategies.     

交织结构的耐单粒子瞬变压控振荡器

为提高辐照环境下振荡器工作的可靠性,提出一种交织结构的抗辐照设计加固压控振荡器(Voltage-Controlled Oscillator,VCO),该VCO由采用交织结构的延时单元构成,该延时单元支持多数表决功能,可以抑制单粒子瞬变的影响;该VCO环路中无须引入额外的专用表决模块,可以产生均匀的多相位输出。所提出的加固差分VCO是基于130 nm体硅互补金属氧化物半导体工艺设计的。模拟结果表明,所设计的加固VCO在100 fC~800 fC沉积电荷量的轰击范围内,其所产生的最大相位偏移不超过0.35 rad。     

《现代教育技术》课程多元评价的实践探索

以往的《现代教育技术》课程教学效果评价存在诸多问题,本文针对《现代教育技术》课程特点,结合本校实际情况制定教学效果多元评价方案,并在教学中进行实践探索,结果表明教学效果多元评价方案能客观评价学生的学习绩效,充分调动学生的学习兴趣,提高学生的教育技术应用能力。     

A LONG‐RUN ANALYSIS OF DEFENCE SPENDING IN THE NATO COUNTRIES (1960–99)

This paper analyses the long‐run demand for defence output through a homogeneous treatment of 15 NATO member countries between 1960 and 1999. We carry out a progressive study of the interactions between either defence spending or defence burden and their main determinants: income, external threat and allied military spending. To that end, we use time‐series analysis with endogenously determined structural breaks. We further consider individual country functions related to one another through a common correlated effects method, in order to take into account explicitly the connections between members of an alliance.     

22 nm全耗尽型绝缘体上硅器件单粒子瞬态效应的敏感区域

基于3D-TCAD模拟,研究了22 nm全耗尽型绝缘体上硅(fully depleted silicon-on-insulator,FDSOI)器件单粒子瞬态(single-event transient,SET)效应的敏感性区域。对比了使用单管和使用反相器来研究器件SET敏感性区域的方法,从而分析实际电路中重离子轰击位置对22 nm FDSOI器件SET敏感性的影响,并从电荷收集机制的角度进行了解释。深入分析发现寄生双极放大效应对重粒子轰击位置敏感是造成器件不同区域SET敏感性不同的原因。而单管漏极接恒压源造成漏极敏感性增强是导致单管与反相器中器件SET敏感区域不同的原因。修正了FDSOI工艺下器件SET敏感性区域的研究方法,与单管相比,采用反相器进行仿真,结果更符合实际情况,这将为器件SET加固提供理论指导。